Alternative method for replacing the conventional Silicon dioxide dielectrics in MOSFETs is using high dielectrics for low power applications . The objective of this paper is to analyse the performance of MOSFET with high dielectric gate oxide. In this paper we have shown a comparative study and analysis of n channel MOSFET designed with HFO2 2.2 Dielectric constant. The dielectric constant of SiO2 is 3.9 and this value is inherited in almost all simulation programs regarding MOSFET parameter evaluation. The dielectric constant ε affects the oxide capacitance via the relation: ox o ox t A C εε = where A is the device area in cm2, ε ο the vacuum dielectric permittivity, Cox the Scientific and technological issues related to semiconductor devices and materials. • High dielectric constant gate dielectric/metal electrode systems for advanced CMOS Dielectric Implementation," Chapter 6, in "High-K Gate Dielectric Materials for VLSI MOSFET Application" (editors: H. R. Huff and D. C. Gilmer) published by Springer Based on strength of material dielectric is divided in two categories namely: Low-k and High-k. A. LOW-k A low-k as the name specifies the one with small dielectric constant. Although there is availability of large number of materials with lower dielectric constants but in terms of integrity to a manufacturing process only some of them are Fig.7: Gate Capacitance with spacer dielectric constant Due to the use of high k material for spacer, the overall gate capacitance increases, that is shown in Fig.7. III.2 Use of high K dielectric material as gate oxide Use of high K dielectric materials for gate oxide, increases the Ion/Ioff ratio of the device which is very essential for dielectric materials were highlighted.The simulation results for different high-k dielectric materials were shown. It is guided that a high-k dielectric material is required to overcome and control the effects of tunneling current. VI. REFERENCES [1] H.R.Huff, D.C.Gilmer "High Dielectric Constant Material", VLSI MOSFET Application, aug. 2007. [5] Huff H and Gilmer D (ed) 2004 High K gate Dielectrics (Berlin: Springer) Google Scholar [6] Houssa M (ed) 2003 High Dielectric Constant Materials: VLSI MOSFET Applications (London: IOP) Google Scholar [7] Demkov A A and Navrotsky A (ed) 2005 Materials Fundamentals of Gate Oxides (Dordrecht: Springer) Crossref Google Scholar View PDF; Download Full Issue; Solid-State Electronics. Volume 54, In the previous work, MoN and TiN/MoN stacks were studied and compared for high WF metal gate applications . High dielectric constant materials: VLSI mosfet applications. Springer, New York (2004) p. 416. GaN is a promising semiconductor electronic material for applications in high-temperature, high-speed and high-power gate dielectrics on GaN and making high-performance GaN MOSFETs, though signi cant progress has been made on (9eV), high dielectric constant (k 8.6 10), high breakdown eld (10 30MV/cm), thermal stability, and chemical The silicon and silicon dioxide surface passivation process was developed by Egyptian engineer Mohamed M. Atalla at Bell Labs during the late 1950s, and then used in the first MOSFETs (metal-oxide-semiconductor field-effect transistors). Silicon dioxide remains the standard gate dielectric in MOSFET te